Electrical characterization of CdZnTe/Si diode structure

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dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authoridParlak, Mehmet / 0000-0001-9542-5121
dc.authoridTerlemezoğlu, Makbule / 0000-0001-7912-0176
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.authorwosidParlak, Mehmet / ABB-8651-2020
dc.authorwosidTerlemezoğlu, Makbule / ABA-5010-2020
dc.authorwosidDoğru Balbaşı, Ciğdem / M-8679-2019
dc.contributor.authorDoğru Balbaşı, Ciğdem
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2021-11-01T15:05:12Z
dc.date.available2021-11-01T15:05:12Z
dc.date.issued2020
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractTemperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. Obtained profiles enable us to understand the different characteristics of the diode structure such as the carrier conduction mechanism and the nature of the interfacial layer. Over the temperature range between 220 and 340 K, taking consideration of the disparity in the forward-biased current, the diode parameters such as saturation current (I-0), zero-bias barrier height (Phi(B0)) and ideality factor (n) have been obtained. The barrier height increased (0.53 to 0.80 eV) while the ideality factor decreased (4.63 to 2.79) with increasing temperature from 220 to 340 K, indicating an improvement in the junction characteristics at high temperatures. Due to the inhomogeneity in barrier height, the conduction mechanism was investigated by Gaussian distribution analysis. Hence, the mean zero-bias barrier height ((Phi) over bar (B0)) and zero-bias standard deviation (sigma(0)) were calculated as 1.31 eV and 0.18, respectively. Moreover, for holes in p-type Si, Richardson constant was found to be 32.09 A cm(-2) K-2 via modified Richardson plot. Using the capacitance-voltage (C - V) and conductance-voltage (G - V) characteristics, series resistance (R-s) and density of interfacial traps (D-it) have been also investigated in detail. A decreasing trend for R-s and D-it profiles with increasing frequency was observed due to the impurities at the CdZnTe/Si interface and interfacial layer between the front metal contact and CdZnTe film.
dc.identifier.citationBalbasi, C. D., Terlemezoglu, M. A. K. B. U. L. E., Gullu, H. H., Yildiz, D. E., & Parlak, M. E. H. M. E. T. (2020). Electrical characterization of CdZnTe/Si diode structure. Applied Physics A, 126(8), 1-7.
dc.identifier.doi10.1007/s00339-020-03772-3
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85087969314
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-020-03772-3
dc.identifier.urihttps://hdl.handle.net/11491/7169
dc.identifier.volume126en_US
dc.identifier.wosWOS:000553133500001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCdZnTeen_US
dc.subjectThin filmen_US
dc.subjectInterface trapsen_US
dc.subjectTransport mechanismen_US
dc.subjectGaussian distributionen_US
dc.titleElectrical characterization of CdZnTe/Si diode structure
dc.typeArticle

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