Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes

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dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorDökme, İlbilge
dc.date.accessioned2019-05-10T09:38:55Z
dc.date.available2019-05-10T09:38:55Z
dc.date.issued2011
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThe dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using experimental C-V and G/w-V measurements. Experimental results indicated that the voltage dependence of the real part of the dielectric constant (??) and loss tangent (tan ? characteristics have a peak at each frequency. The values of ?? increase with decreasing frequency and tend to be frequency independent in the negative voltage region. However, the values of the dielectric loss (??) increase with decreasing frequency at each voltage. In contrast, ?? and ?? are almost found to decrease, and the ac electrical conductivity (?ac) and the real part of the electric modulus (M?) increase, with increasing frequency. In addition, the imaginary part of the electric modulus (M?) showed a peak that shifts to a higher frequency with increasing applied voltage. It can be concluded that interfacial polarization can more easily occur at low frequencies, and consequently the majority of interface states at the Si-SiO2 interface contribute to the deviation of the dielectric properties of Al/SiO2/p-Si (MIS) SDs. © 2011 American Institute of Physics.
dc.identifier.citationYıldız, D. E., & Dökme, İ. (2011). Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes. Journal of applied physics, 110(1), 014507.
dc.identifier.doi10.1063/1.3602090
dc.identifier.issn0021-8979
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.3602090
dc.identifier.urihttps://hdl.handle.net/11491/546
dc.identifier.volume110en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subject[Belirlenecek]en_US
dc.titleFrequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
dc.typeArticle

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