ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

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dc.authorid0000-0003-2212-199X
dc.contributor.authorAydın, Sefa B.K.
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorKanbur Çavuş, Hatice
dc.contributor.authorŞahingöz, Recep
dc.date.accessioned2019-05-10T09:39:46Z
dc.date.available2019-05-10T09:39:46Z
dc.date.issued2014
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractElectrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using thermionic emission (TE) theory, the main electrical parameters of the Al/TiO2/p-Si Schottky diode such as ideality factor (n), zero bias barrier height (?Bo) and series resistance (Rs) were estimated from forward bias I-V plots. At the same time, values of n, ?Bo and Rs were obtained from Cheung's method. It was shown that electrical parameters obtained from TE theory and Cheung's method exhibit close agreement with each other. The reverse-bias leakage current mechanism of Al/TiO2/p-Si Schottky barrier diodes was investigated. The I-V curves in the reverse direction are taken and interpreted via both Schottky and Poole-Frenkel effects. Schottky effect was found to be dominant in the reverse direction. In addition, the capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of diode were investigated at different frequencies (50-500 kHz). The frequency dependence of interface states density was obtained from the Hill-Coleman method and the voltage dependence of interface states density was obtained from the high-low frequency capacitance method. © Indian Academy of Sciences.
dc.identifier.citationAydın, S. B., Yıldız, D. E., Kanbur Çavuş, H.,Şahingöz, R. (2014). ALD TiO 2 thin film as dielectric for Al/p-Si Schottky diode. Bulletin of Materials Science, 37(7), 1563-1568.
dc.identifier.doi10.1007/s12034-014-0726-6
dc.identifier.endpage1568en_US
dc.identifier.issn0250-4707
dc.identifier.issue7en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage1563en_US
dc.identifier.urihttps://doi.org/10.1007/s12034-014-0726-6
dc.identifier.urihttps://hdl.handle.net/11491/772
dc.identifier.volume37en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIndian Academy of Sciences
dc.relation.ispartofBulletin of Materials Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectALD TiO2en_US
dc.subjectElectrical Propertiesen_US
dc.subjectInterface State Densityen_US
dc.subjectPoole-Frenkel Emissionen_US
dc.subjectSchottky Effecten_US
dc.titleALD TiO2 thin film as dielectric for Al/p-Si Schottky diode
dc.typeArticle

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