The photo-electrical properties of the p-Si/Fe(II)-polymeric complex/Au diode

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dc.authorid0000-0001-7181-9556
dc.authorid0000-0002-1447-7534
dc.contributor.authorGündüz, Bayram
dc.contributor.authorTuran, Nevin
dc.contributor.authorKaya, Esin
dc.contributor.authorÇolak, Naki
dc.date.accessioned2019-05-13T08:57:28Z
dc.date.available2019-05-13T08:57:28Z
dc.date.issued2013
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Kimya Bölümü
dc.description.abstractIn this study, the Schiff base monomer was prepared by a common condensation method of salicylaldehyde and (E)-3-amino-4-((3-bromophenyl)diazenyl)-1H-pyrazol-5-ol. The poly(Schiff base) was synthesized from the oxidative polycondensation of the Schiff base monomer with NaOCl in an aqueous alkaline medium. After obtaining Schiff base polymer, Fe(II)–polymeric complex with Fe(II) of Schiff base polymer was successfully synthesized. Ligand, monomer, Schiff base polymer and Fe(II)–polymeric complex were characterized using elemental analysis, 1H NMR, 13C NMR, FT IR, GPC, UV–vis and magnetic susceptibility. Then, we fabricated the p-Si/Fe(II)–polymeric complex/Au diode and investigated the electronic and photoconductivity properties of the p-Si/Fe(II)–polymeric complex/Au diode by current–voltage measurements under dark and various illumination conditions. We calculated the electrical and photo-electrical parameters of the p-Si/Fe(II)–polymeric complex/Au diode such as the rectification ratio (r), ideality factor (n), barrier height (?b), Richardson constant (A*), series (Rs) and shunt resistance (Rsh) and photocurrent (Iph), responsivity (R) and photoconductivity sensitivity (S). The obtained n values confirm the presence of a combination of recombination and diffusion currents in the p-Si/Fe(II)–polymeric complex/Au diode. The r, n, ?b, Rs and Rsh values of the p-Si/Fe(II)–polymeric complex/Au diode decreased with increasing illumination intensity. The Iph, R and S values of the p-Si/Fe(II)–polymeric complex/Au diode increased with increasing illumination intensity. The synthesized Fe(II)–polymeric complex exhibits semiconductor property, it can be used in production of the metal-semiconductor (Schottky) diode and it is sensitive to light. The p-Si/Fe(II)–polymeric complex/Au diode exhibits a photoconductivity effect.
dc.identifier.citationGündüz, B., Turan, N., Kaya, E., & Colak, N. (2013). The photo-electrical properties of the p-Si/Fe (II)–polymeric complex/Au diode. Synthetic Metals, 184, 73-82.
dc.identifier.doi10.1016/j.synthmet.2013.10.002
dc.identifier.endpage82en_US
dc.identifier.issn0379-6779
dc.identifier.scopusqualityQ1
dc.identifier.startpage73en_US
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2013.10.002
dc.identifier.urihttps://hdl.handle.net/11491/937
dc.identifier.volume184en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectFe (II)-Polymeric Complexen_US
dc.subjectIllumination Intensityen_US
dc.subjectPhoto-Electrical Parametersen_US
dc.subjectPhotoconductivity Sensitivityen_US
dc.subjectSchiff Base Polymer Complexesen_US
dc.titleThe photo-electrical properties of the p-Si/Fe(II)-polymeric complex/Au diode
dc.typeArticle

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