Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend

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dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authoridÇırpan, Ali / 0000-0003-3051-8380
dc.authorwosidToppare, Levent / ABA-5056-2020
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorToppare, Levent
dc.contributor.authorÇırpan, Ali
dc.date.accessioned2021-11-01T15:05:06Z
dc.date.available2021-11-01T15:05:06Z
dc.date.issued2020
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThe forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) as a partner of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Two-order of magnitude rectification ratio was achieved, and the temperature-dependent values of saturation current, zero-bias barrier height, and ideality factor were extracted according to the thermionic emission model. The temperature responses of these diode parameters showed an existence of inhomogeneity in the barrier height formation. As a result, the observed non-ideal behavior was explained by Gaussian distribution of barrier height where low-barrier regions are effective in the forward biased conduction mechanism at low temperatures. Together with this analysis, series resistances were evaluated using Cheung's functions and also density of interface states were investigated. On the other hand, reverse biased current flow was found under the dominant effect of Poole-Frenkel effects associated with these interfacial traps. The reverse current conduction mechanism was detailed by calculating characteristic field-lowering coefficients and barrier height values in the emission process from the trapped state in the range of temperatures of interest.
dc.identifier.citationYıldız, D. E., Gullu, H. H., Toppare, L. E. V. E. N. T., & Cirpan, A. (2020). Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend. Journal of Materials Science: Materials in Electronics, 31(18), 15233-15242.
dc.identifier.doi10.1007/s10854-020-04088-x
dc.identifier.endpage15242en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue18en_US
dc.identifier.scopus2-s2.0-85089007259
dc.identifier.scopusqualityQ2
dc.identifier.startpage15233en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-04088-x
dc.identifier.urihttps://hdl.handle.net/11491/7108
dc.identifier.volume31en_US
dc.identifier.wosWOS:000556210900003
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subject[No Keywords]en_US
dc.titleAnalysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
dc.typeArticle

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