Cu-Al-Mn shape memory alloy based Schottky diode formed on Si
[ X ]
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier B.V.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, martensite was made over the wide temperature ranges and the two forms of martensite mor-phology in Cu85.41Al9.97Mn4.62shape memory alloy (SMA) were ??and ??martensite phases. The SMA wascharacterized by the use of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. In order tofabricate the Schottky diode, Cu-Al-Mn alloy was used as a Schottky contact onp-type Si semiconductor sub-strate. Some of the crucial parameters for diodes such as ideality factor and barrier height values were obtainedfrom electrical measurements. Illumination-dependent measurements showed that the fabricated device presentsthe behaviors of photodiode and photoconducting. Besides, it is found that the fabricated diode's structure issensitive to illumination. Frequency-dependent measurements also indicated that the series resistance and in-terface state parameters are crucial to affect electrical characteristics of the fabricated diode. The experimentalresults showed that the fabricated Schottky device could be used in variety of optoelectronic applications.
Açıklama
Anahtar Kelimeler
Cu-Al-Mn, Frequency Dependence, Illumination Measurement, Schottky Diode, Shape Memory Alloy
Kaynak
Physica B: Condensed Matter
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
560
Sayı
Künye
Aldırmaz, E., Tataroğlu, A., Dere, A., Güler, M., Güler, E., Karabulut, A., & Yakuphanoglu, F. (2019). Cu-Al-Mn shape memory alloy based Schottky diode formed on Si. Physica B: Condensed Matter, 560, 261-266.
