Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film

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dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorYıldız, Dilber Esra
dc.date.accessioned2021-11-01T15:03:15Z
dc.date.available2021-11-01T15:03:15Z
dc.date.issued2020
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractEffects of frequency and temperature variations on the electrical properties of Au/Si3N4/n-4H SiC diode were investigated. The diode responses to the change in frequency with applied AC signal of varying frequencies and to the change in temperature controlled by cryogenic control system were discussed with considering possible deviation from ideality and effects of interface states at the junction. Depending on its capacitive and conductive characteristics, internal parasitic resistances were associated with the observed dielectric behaviors of the diode. With the use of Si3N4 layer, the values of complex dielectric constant were extracted and this parameter was found to be in a strong dependence of interface changes in low frequency region whereas this variation was very low at higher frequencies. In addition, there is a slight decrease in the dielectric constant with increasing temperature whereas the values of dielectric loss give a remarkable response to the temperature at forward bias region. Depending on these profiles, AC conductivity values were found in decreasing behavior with both frequency and temperature. From the temperature dependent behaviors, activation energies were calculated from the corresponding Arrhenius plots. Together with the series resistance of the diode and density of interface states, interface polarization was found in a dominant role in both complex dielectric and electric modulus characteristics of the diode.
dc.description.sponsorshipHitit University (Corum, Turkey) [FEF19004.15.010, FEF19002.15.001, FEF01.13.003]en_US
dc.description.sponsorshipThis work was financed by Hitit University (Corum, Turkey) under the Grant Nos. FEF19004.15.010, FEF19002.15.001 and FEF01.13.003.en_US
dc.identifier.citationGullu, H. H., & Yildiz, D. E. (2020). Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film. Journal of Materials Science: Materials in Electronics, 31(11), 8705-8717.
dc.identifier.doi10.1007/s10854-020-03405-8
dc.identifier.endpage8717en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-85083721500
dc.identifier.scopusqualityQ2
dc.identifier.startpage8705en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03405-8
dc.identifier.urihttps://hdl.handle.net/11491/7044
dc.identifier.volume31en_US
dc.identifier.wosWOS:000528116300001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleTemperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
dc.typeArticle

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