Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode

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dc.authoridParlak, Mehmet / 0000-0001-9542-5121
dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authoridSürücü, Özge / 0000-0002-8478-1267
dc.authorwosidParlak, Mehmet / ABB-8651-2020
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.authorwosidSürücü, Özge / ABA-4839-2020
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorSürücü, Özge
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2021-11-01T15:05:07Z
dc.date.available2021-11-01T15:05:07Z
dc.date.issued2020
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThis study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calculated from the forward bias current-voltage curve at room temperature under dark conditions as 0.79 eV and 4.22 eV, respectively. In order to get detailed information about density of interface states and series resistance of this structure, capacitance-voltage and conductance-voltage measurements in the frequency range of 10-1000 kHz were performed. As a result, a decreasing capacitance profile with increasing frequency was obtained. In addition, peak-like behavior in the capacitance profiles was observed and these were found to be the indication of density of states. Further analysis was performed on the evaluation of density of interface states values and these values were calculated by using two different methods: Hill-Coleman and high-low frequency capacitance. These profiles were also analyzed by eliminating the effect of series resistance values on the measured capacitance and conductance; then the values of corrected capacitance and conductance as a function of applied voltage were discussed. Based on these analyses on the capacitive characteristics of the diode, dielectric constant, dielectric loss, loss tangent, electrical conductivity, and the real and imaginary part of electric modulus were investigated for complete understanding on the diode characteristics.
dc.description.sponsorshipHitit University (Corum, Turkey) [FEF19004.15.010, FEF19002.15.001, FEF01.13.003]en_US
dc.description.sponsorshipThis work was financed by Hitit University (Corum, Turkey) under the Grant No. FEF19004.15.010, FEF19002.15.001 and FEF01.13.003.en_US
dc.identifier.citationGullu, H. H., Yildiz, D. E., Surucu, O., & Parlak, M. (2020). Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode. Journal of Materials Science: Materials in Electronics, 31(12), 9394-9407.
dc.identifier.doi10.1007/s10854-020-03479-4
dc.identifier.endpage9407en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85085080245
dc.identifier.scopusqualityQ2
dc.identifier.startpage9394en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03479-4
dc.identifier.urihttps://hdl.handle.net/11491/7120
dc.identifier.volume31en_US
dc.identifier.wosWOS:000530248100003
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleFrequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
dc.typeArticle

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