Defect characterization in Bi12GeO20 single crystals by thermoluminescence

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dc.contributor.authorDelice, S.
dc.contributor.authorIsik, M.
dc.contributor.authorSarigul, N.
dc.contributor.authorGasanly, N. M.
dc.date.accessioned2021-11-01T15:06:09Z
dc.date.available2021-11-01T15:06:09Z
dc.date.issued2021
dc.department[Belirlenecek]
dc.description.abstractBi12GeO20 single crystal grown by Czochralski method was investigated in terms of thermoluminescence (TL) properties. TL experiments were performed for various heating rates between 1 and 6 K/s in the temperature region of 300-675 K. One TL peak with peak maximum temperature of 557 K was observed in the TL spectrum as constant heating rate of 1 K/s was employed. Curve fitting, initial rise and variable heating rate methods were applied to calculate the activation energy of trap level corresponding to this TL peak. Analyses resulted in a presence of one trap center having mean activation energy of 0.78 eV. Heating rate characteristics of revealed trap center was also explored and theoretically well-known behavior that TL intensity decreases and peak maximum temperature increases with heating rates was observed for the trap level. Distribution of trapping levels was studied by thermally cleaning process for different T-stop between 425 and 525 K. Quasi-continuously distributed trapping levels were revealed with mean activation energies ranging from 0.78 to 1.26 eV. Moreover, absorption analysis revealed an optical transition taking place between a defect level and conduction band with an energy difference of 2.51 eV. These results are in good agreement for the presence of intrinsic defects above valence band in Bi12GeO20 crystals.
dc.description.sponsorshipATILIM UniversityAtilim University [ATU-ADP-1920-03]en_US
dc.description.sponsorshipThis work was supported by ATILIM University under Grant No: ATU-ADP-1920-03.en_US
dc.identifier.doi10.1016/j.jlumin.2021.117905
dc.identifier.issn0022-2313
dc.identifier.issn1872-7883
dc.identifier.scopus2-s2.0-85099335771
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.jlumin.2021.117905
dc.identifier.urihttps://hdl.handle.net/11491/7501
dc.identifier.volume233en_US
dc.identifier.wosWOS:000629775100026
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[Belirlenecek]
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofJournal Of Luminescence
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectSillenitesen_US
dc.subjectDefectsen_US
dc.subjectLuminescenceen_US
dc.titleDefect characterization in Bi12GeO20 single crystals by thermoluminescence
dc.typeArticle

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