Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes

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dc.authoridBayraklı Sürücü, Özge / 0000-0002-8478-1267
dc.authoridTerlemezoğlu, Makbule / 0000-0001-7912-0176
dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authoridParlak, Mehmet / 0000-0001-9542-5121
dc.authorwosidBayraklı Sürücü, Özge / ABA-4839-2020
dc.authorwosidTerlemezoğlu, Makbule / ABA-5010-2020
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.authorwosidParlak, Mehmet / ABB-8651-2020
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2021-11-01T15:02:58Z
dc.date.available2021-11-01T15:02:58Z
dc.date.issued2019
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm(-2)K(-2) with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results.
dc.identifier.citationSürücü, Ö. B., Güllü, H. H., Terlemezoglu, M., Yildiz, D. E., & Parlak, M. (2019). Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes. Physica B: Condensed Matter, 570, 246-253.
dc.identifier.doi10.1016/j.physb.2019.06.024
dc.identifier.endpage253en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85068084694
dc.identifier.scopusqualityQ2
dc.identifier.startpage246en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2019.06.024
dc.identifier.urihttps://hdl.handle.net/11491/6889
dc.identifier.volume570en_US
dc.identifier.wosWOS:000481733800040
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectThin Filmen_US
dc.subjectSchottky Diodeen_US
dc.subjectTransport Mechanismen_US
dc.subjectGaussian Distributionen_US
dc.titleDetermination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
dc.typeArticle

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