Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application

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dc.authorid0000-0003-2212-199X
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorKoçyiğit, Adem
dc.contributor.authorYıldırım, Murat
dc.date.accessioned2020-03-12T10:38:58Z
dc.date.available2020-03-12T10:38:58Z
dc.date.issued2020en_US
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in magnitude rectification rate and diode illumination results in efficient rectification with increase in intensity. The analysis of current-voltage curve results a non-ideal diode characteristics according to the thermionic emission model due to the existence of parasitic resistances and interface states. The measured current-voltage values are used to extract the barrier height and ideality factor under dark and illumination conditions. Under illumination, photo-generated carriers contribute to the current flow and linear photo-conductivity behavior in photo-current measurements with illumination shows the possible use of hybrid PCBM:ZnO layer in Si-based photodiodes. In addition, change in the series and shunt resistance values under illumination is found to be effective in this light-sensing behavior of the diode. This characteristic is also observed from the typical on/off illumination switching behavior for the photodiodes in transient photo-current, photo-capacitance and photo-conductance measurements with the quick response to the illumination. The deviations from ideality are also discussed by means of distribution of interface states and series resistance depending on the applied frequency and bias voltage.
dc.description.provenanceSubmitted by Zeynep Umut Arslan (umutarslan@hitit.edu.tr) on 2020-03-12T10:38:30Z No. of bitstreams: 0en
dc.description.provenanceApproved for entry into archive by Zeynep Umut Arslan (umutarslan@hitit.edu.tr) on 2020-03-12T10:38:58Z (GMT) No. of bitstreams: 0en
dc.description.provenanceMade available in DSpace on 2020-03-12T10:38:58Z (GMT). No. of bitstreams: 0 Previous issue date: 2020en
dc.identifier.citationGullu, H. H., Yildiz, D. E., Kocyigit, A., & Yıldırım, M. (2020). Electrical properties of Al/PCBM: ZnO/p-Si heterojunction for photodiode application. Journal of Alloys and Compounds, 154279.
dc.identifier.doi10.1016/j.jallcom.2020.154279
dc.identifier.issn0925-8388
dc.identifier.issue827en_US
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2020.154279
dc.identifier.urihttps://hdl.handle.net/11491/5779
dc.identifier.wosWOS:000520405900033
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectPhotodiodeen_US
dc.subjectPCBMen_US
dc.subjectZnOen_US
dc.subjectSpin Coatingen_US
dc.subjectElectrical Propertiesen_US
dc.titleElectrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
dc.typeArticle

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