Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals

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dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authoridÖzel, Faruk / 0000-0002-3689-0469
dc.authoridYıldırım, Murat / 0000-0002-4541-3752
dc.authorwosidYıldırım, Murat / AAR-6514-2021
dc.authorwosidSarılmaz, Adem / AAK-4520-2021
dc.authorwosidÖzel, Faruk / AAK-4425-2021
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorSarılmaz, Adem
dc.contributor.authorÖzel, Faruk
dc.contributor.authorKoçyiğit, Adem
dc.contributor.authorYıldırım, Murat
dc.date.accessioned2021-11-01T15:05:16Z
dc.date.available2021-11-01T15:05:16Z
dc.date.issued2020
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractDerived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed analysis on material characteristics of CuCo5S8 thin-film layer, the work is focused on the electrical characteristics of Au/CuCo5S8/Si diode to investigate its current-voltage, capacitance-voltage, and conductance-voltage characteristics under dark and illuminated conditions. CuCo5S8 nanocrystals with an average size of 5 nm are obtained using hot-injection method, and they are used to form thin-film interfacial layer between metal (Au) and semiconductor (Si). Under dark conditions, the diodes show about four orders in magnitude rectification rate and diode illumination results in efficient rectification with increase in intensity. The analysis of current-voltage curve results in non-ideal diode characteristics according to the thermionic emission model due to the existence of series resistances and interface states with interface layer. The measured current-voltage values are used to extract the main diode parameters under dark and illumination conditions. Under illumination, photogenerated carriers contribute to the current flow and linear photoconductivity behavior in photocurrent measurements with illumination shows the possible use of CuCo5S8 layer in Si-based photodiodes. This characteristic is also observed from the typical on/off illumination switching behavior for the photodiodes in transient photocurrent, photocapacitance, and photoconductance measurements with a quick response to the illumination. The deviations from ideality are also discussed by means of distribution of interface states and series resistance depending on the applied frequency and bias voltage.
dc.description.sponsorshipTUBITAK (The Scientific and Technological Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [217M212]en_US
dc.description.sponsorshipThis study was supported by TUBITAK (The Scientific and Technological Research Council of Turkey) under Project Number 217M212.en_US
dc.identifier.citationYildiz, D. E., Gullu, H. H., Sarilmaz, A., Ozel, F., Kocyigit, A., & Yildirim, M. (2020). Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo 5 S 8 nanocrystals. Journal of Materials Science: Materials in Electronics, 31(2), 935-948.
dc.identifier.doi10.1007/s10854-019-02603-3
dc.identifier.endpage948en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85075341942
dc.identifier.scopusqualityQ2
dc.identifier.startpage935en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-02603-3
dc.identifier.urihttps://hdl.handle.net/11491/7197
dc.identifier.volume31en_US
dc.identifier.wosWOS:000519599500002
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subject[No Keywords]en_US
dc.titleDark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
dc.typeArticle

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