Study on the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure

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dc.authorid0000-0003-2212-199X
dc.contributor.authorAlialy, Sahar
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2019-05-13T09:08:43Z
dc.date.available2019-05-13T09:08:43Z
dc.date.issued2016
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this paper we examine the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure. The current-voltage-temperature (IR-V-T) plots have been investigated in the temperature range of 200-380 K. Experimental results indicated that IR-VR characteristics were found to be in agreement with the predicted characteristics, which are based on the Frenkel-Poole (FP) emission rather than Schottky emission (SE). According to FP theory, the main process in leakage current-transport is the emission of the electrons from a trapped states near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation. The obtained A(T) value versus q/kT plots were drawn and the barrier height (?t) which is necessary for electron emission from the trap was found at about 42 meV for low and 111 meV high temperatures, respectively. Copyright © 2016 by American Scientific Publishers.
dc.identifier.citationAlialy, S., Yıldız, D. E., Altındal, Ş. (2016). Study on the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure. Journal of Nanoelectronics and Optoelectronics, 11(5), 626-630.
dc.identifier.doi10.1166/jno.2016.1942
dc.identifier.endpage630en_US
dc.identifier.issn1555-130X
dc.identifier.issue5en_US
dc.identifier.scopusqualityN/A
dc.identifier.startpage626en_US
dc.identifier.urihttps://doi.org/10.1166/jno.2016.1942
dc.identifier.urihttps://hdl.handle.net/11491/2041
dc.identifier.volume11en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmerican Scientific Publishers
dc.relation.ispartofJournal of Nanoelectronics and Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAu/TiO2/n-4H-SiC SBDsen_US
dc.subjectFrenkel-Pooleen_US
dc.subjectLeakage Current-Voltage (IR-VR) Characteristicsen_US
dc.subjectSchottky Emissionen_US
dc.subjectTemperature Dependenten_US
dc.titleStudy on the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure
dc.typeArticle

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