Investigation of traps distribution in GaS single crystals by thermally stimulated current measurements

Basit Öğe Kaydı
dc.authoridDelice, Serdar / 0000-0001-5409-6528
dc.contributor.authorDelice, S.
dc.contributor.authorIsik, M.
dc.contributor.authorGasanly, N. M.
dc.date.accessioned2021-11-01T15:06:05Z
dc.date.available2021-11-01T15:06:05Z
dc.date.issued2021
dc.department[Belirlenecek]
dc.description.abstractThermally stimulated current (TSC) investigations of p-GaS (gallium sulfide) single crystals grown by Bridgman method were achieved by virtue of consecutive experiments carried out at various heating rates in between 0.4 and 1.0 K/s in the temperature range of 10-280 K. One single TSC peak around 148 K and overlapped, incomplete peaks in the end limit temperature of the experiments were observed in the spectrum recorded at constant heating rate of 1.0 K/s. Individual peak was analyzed utilizing curve fitting method. Existence of one trapping level centered at 0.11 eV was revealed by the analyses. Heating rate dependency of obtained TSC curve was also studied and it was shown that TSC intensity decreased besides increase of peak maximum temperature with heating rate. Characteristics feature of trapping mechanism was investigated in detail by employing different stopping temperature between 50 and 110 K. Analyses on T-m-T-stop dependency resulted in a presence of quasi-continuously distributed traps with activation energies ranging from 0.11 to 0.55 eV. The revealed trap was thought to be arising from intrinsic defect possibly created by V-Ga or antisite S-Ga.
dc.identifier.doi10.1016/j.mssp.2020.105626
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85098226341
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2020.105626
dc.identifier.urihttps://hdl.handle.net/11491/7487
dc.identifier.volume125en_US
dc.identifier.wosWOS:000618875200003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[Belirlenecek]
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science In Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectThermally stimulated currenten_US
dc.subjectGaSen_US
dc.subjectDefectsen_US
dc.titleInvestigation of traps distribution in GaS single crystals by thermally stimulated current measurements
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu