Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique

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dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2019-05-10T09:38:49Z
dc.date.available2019-05-10T09:38:49Z
dc.date.issued2018
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm-2K-2 by means of modified Richardson plot. © 2018 Published by NRC Research Press.
dc.identifier.citationGüllü, H. H., Terlemezoğlu, M., Bayraklı, Ö., Yıldız, D. E., Parlak, M. (2018). Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique. Canadian Journal of Physics, 96(7), 816-825.
dc.identifier.doi10.1139/cjp-2017-0777
dc.identifier.endpage825en_US
dc.identifier.issn0008-4204
dc.identifier.issue7en_US
dc.identifier.scopusqualityQ3
dc.identifier.startpage816en_US
dc.identifier.urihttps://doi.org/10.1139/cjp-2017-0777
dc.identifier.urihttps://hdl.handle.net/11491/488
dc.identifier.volume96en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherCanadian Science Publishing
dc.relation.ispartofCanadian Journal of Physics
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectJunction Diodesen_US
dc.subjectSchottky Barriersen_US
dc.subjectSputteringen_US
dc.subjectSurface and Interface Statesen_US
dc.subjectThermionic Emissionen_US
dc.titleInvestigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
dc.typeConference Object

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