Temperature-dependent band gap characteristics of Bi12SiO20 single crystals

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dc.authorid0000-0001-5409-6528
dc.contributor.authorIşık, Mehmet
dc.contributor.authorDelice, Serdar
dc.contributor.authorGasanly, Nizami
dc.contributor.authorDarvishov, Namiq H.
dc.contributor.authorBagiev, Vidadi E.
dc.date.accessioned2020-01-20T08:19:16Z
dc.date.available2020-01-20T08:19:16Z
dc.date.issued2019en_US
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractBi12SiO20 single crystals have attracted interest due to their remarkable photorefractive characteristics. Since bandgap and refractive index are related theoretically to each other, it takes much attention to investigate temperature dependency of bandgap energy to understand the behavior of photorefractive crystals. The present study aims at investigating structural and optical characteristics of photorefractive Bi12SiO20 single crystals grown by the Czochralski method. The structural characterization methods indicated that atomic composition ratios of constituent elements were well-matched with the chemical compound Bi12SiO20, and grown crystals have a cubic crystalline structure. Optical properties of crystals were investigated by room temperature Raman spectroscopy and temperature-dependent transmission measurements between 10 and 300?K. The analyses of transmittance spectra by absorption coefficient and derivative spectrophotometry techniques resulted in energy bandgaps decreasing from 2.61 to 2.48?eV and 2.64 to 2.53?eV as temperature was increased from 10 to 300?K. The Varshni model was applied to analyze temperature-bandgap energy dependency.
dc.description.provenanceSubmitted by Fatma Özdemir (fatmaozdemir@hitit.edu.tr) on 2020-01-20T08:19:01Z No. of bitstreams: 0en
dc.description.provenanceApproved for entry into archive by Fatma Özdemir (fatmaozdemir@hitit.edu.tr) on 2020-01-20T08:19:16Z (GMT) No. of bitstreams: 0en
dc.description.provenanceMade available in DSpace on 2020-01-20T08:19:16Z (GMT). No. of bitstreams: 0 Previous issue date: 2019en
dc.identifier.citationIşık, M., Delice, S., Gasanly, N., Darvishov, N. H., Bagiev, V. E.(2019). Temperature-dependent band gap characteristics of Bi12SiO20 single crystals, Journal of Applied Physics,126(24).
dc.identifier.doi10.1063/1.5129019
dc.identifier.issue24en_US
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.5129019
dc.identifier.urihttps://hdl.handle.net/11491/5647
dc.identifier.volume126en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectX-Ray Diffractionen_US
dc.subjectOptical Propertiesen_US
dc.subjectOptical Absorptionen_US
dc.subjectSpectrophotometryen_US
dc.subjectEnergy Levelsen_US
dc.subjectCrystal Structureen_US
dc.titleTemperature-dependent band gap characteristics of Bi12SiO20 single crystals
dc.typeArticle

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