A study on electrical properties of Au/4H-SiC Schottky diode under illumination

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dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorKaradeniz, S.
dc.contributor.authorGüllü, Hasan Hüseyin
dc.date.accessioned2021-11-01T15:05:57Z
dc.date.available2021-11-01T15:05:57Z
dc.date.issued2021
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractY In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform this, the currentvoltage (I-V) characteristics of the Schottky-type diode are analyzed at room temperature. The performance parameters such as saturation current (I-0), barrier height (Phi(B)), ideality factor (n) and series resistance (R-s) are found to be illumination dependent. The reverse biased I - V characteristics under incident light indicate high photo-sensitivity as compared to the response at forward bias. Thus, this result is investigated in detail according to both Schottky and Poole-Frenkel effects. It is found that the Poole-Frenkel mechanism is dominant in the reverse biased region. The Au/4H-SiC Schottky junction has a strong photo-current response to the different illumination intensities and transient photocurrent characteristics of the fabricated device are studied at the illumination intensities of 50 and 100 mW/cm(2). All experimental results indicate that the Au/4H-SiC Schottky diode, with a valuable response to the illumination together with change in illumination intensity, can be used for optoelectronic applications.
dc.identifier.citationYıldız, D. E., Karadeniz, S., & Gullu, H. H. (2021). A study on electrical properties of Au/4H-SiC Schottky diode under illumination. Journal of Materials Science: Materials in Electronics, 32(15), 20130-20138.
dc.identifier.doi10.1007/s10854-021-06480-7
dc.identifier.endpage20138en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue15en_US
dc.identifier.scopus2-s2.0-85110746328
dc.identifier.scopusqualityQ2
dc.identifier.startpage20130en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-021-06480-7
dc.identifier.urihttps://hdl.handle.net/11491/7451
dc.identifier.volume32en_US
dc.identifier.wosWOS:000673702600007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleA study on electrical properties of Au/4H-SiC Schottky diode under illumination
dc.typeArticle

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