The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

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dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.contributor.authorKoçyiğit, Adem
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorSarılmaz, Adem
dc.contributor.authorÖzel, Feyyaz
dc.contributor.authorYıldırım, Murat
dc.date.accessioned2021-11-01T15:05:12Z
dc.date.available2021-11-01T15:05:12Z
dc.date.issued2020
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractCuCo5S8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo5S8/p-Si heterojunction device to characterize the dielectric performance of the CuCo5S8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo5S8, and the results confirmed the crystalline structure of the CuCo5S8. While the detailed structures of the CuCo5S8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo5S8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo5S8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo5S8/p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage- and frequency-dependent dielectric properties of the Au/CuCo5S8/p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from - 2.5 V to + 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (epsilon ') and dielectric loss (epsilon '')), electric modulus (M ' and M ''), and ac electrical conductivity (sigma) were extracted from the C-V and G-V measurements and discussed in details. The results highlighted that the Au/CuCo5S8/p-Si heterojunction device has the frequency- and voltage-dependent dielectric characteristics, and can be considered as switching applications.
dc.description.sponsorshipTUBITAK (The Scientific and Technological Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [217M212]; TUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK)en_US
dc.description.sponsorshipTUBITAK (The Scientific and Technological Research Council of Turkey) supported this study with the Grand Number of 217M212. Authors would like to thank TUBITAK for supporting.en_US
dc.identifier.citationKocyigit, A., Yıldız, D. E., Sarılmaz, A., Ozel, F., & Yıldırım, M. (2020). The dielectric performance of Au/CuCo 5 S 8/p-Si heterojunction for various frequencies. Journal of Materials Science: Materials in Electronics, 31(24), 22408-22416.
dc.identifier.doi10.1007/s10854-020-04742-4
dc.identifier.endpage22416en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue24en_US
dc.identifier.scopus2-s2.0-85094982202
dc.identifier.scopusqualityQ2
dc.identifier.startpage22408en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-04742-4
dc.identifier.urihttps://hdl.handle.net/11491/7167
dc.identifier.volume31en_US
dc.identifier.wosWOS:000585740700005
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subject[No Keywords]en_US
dc.titleThe dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
dc.typeArticle

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