Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements
[ X ]
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier B.V.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10–300 K) with various heating rates between 0.4 and 1.2 K s?1. One glow peak was detected with peak maximum temperature of 26 K at a rate of 0.4 K s?1. The observed glow peak was analyzed using three points and heating rate methods. The analysis results revealed the presence of one trap level with activation energy of 14 meV. Three points method showed that mixed order of kinetic dominates the trapping level. Shift of peak maximum temperature to higher values and decrease in TL intensity were observed as the heating rate was increased progressively. Distribution of traps was demonstrated using an experimental method based on illumination temperature varying between 10 and 14 K. © 2016 Elsevier B.V.
Açıklama
Anahtar Kelimeler
Defects, Luminescence, Optical Properties, Semiconductors
Kaynak
Physica B: Condensed Matter
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
499
Sayı
Künye
Delice, S., & Gasanly, N. M. (2016). Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements. Physica B: Condensed Matter, 499, 44-48.
