Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements

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dc.authorid0000-0001-5409-6528
dc.contributor.authorDelice, Serdar
dc.contributor.authorGasanly, Nizami Mamed
dc.date.accessioned2019-05-13T08:58:00Z
dc.date.available2019-05-13T08:58:00Z
dc.date.issued2016
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractCharacteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10–300 K) with various heating rates between 0.4 and 1.2 K s?1. One glow peak was detected with peak maximum temperature of 26 K at a rate of 0.4 K s?1. The observed glow peak was analyzed using three points and heating rate methods. The analysis results revealed the presence of one trap level with activation energy of 14 meV. Three points method showed that mixed order of kinetic dominates the trapping level. Shift of peak maximum temperature to higher values and decrease in TL intensity were observed as the heating rate was increased progressively. Distribution of traps was demonstrated using an experimental method based on illumination temperature varying between 10 and 14 K. © 2016 Elsevier B.V.
dc.identifier.citationDelice, S., & Gasanly, N. M. (2016). Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements. Physica B: Condensed Matter, 499, 44-48.
dc.identifier.doi10.1016/j.physb.2016.07.006
dc.identifier.endpage48en_US
dc.identifier.issn0921-4526
dc.identifier.scopusqualityQ2
dc.identifier.startpage44en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2016.07.006
dc.identifier.urihttps://hdl.handle.net/11491/1053
dc.identifier.volume499en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectDefectsen_US
dc.subjectLuminescenceen_US
dc.subjectOptical Propertiesen_US
dc.subjectSemiconductorsen_US
dc.titleDefect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements
dc.typeArticle

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