Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
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Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer New York LLC
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high–low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage.
Açıklama
Anahtar Kelimeler
[Belirlenecek]
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
30
Sayı
10
Künye
Güllü, H. H., Bayraklı Sürücü, Ö., Terlemezoğlu, M., Yıldı, D. E., Parlak, M. (2019). Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4/Si/Ag diode structure. Journal of Materials Science: Materials in Electronics, 30(10), 9814-9821.
