Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure

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dc.authorid0000-0003-2212-199X
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2019-05-13T08:58:24Z
dc.date.available2019-05-13T08:58:24Z
dc.date.issued2019
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high–low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage.
dc.identifier.citationGüllü, H. H., Bayraklı Sürücü, Ö., Terlemezoğlu, M., Yıldı, D. E., Parlak, M. (2019). Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4/Si/Ag diode structure. Journal of Materials Science: Materials in Electronics, 30(10), 9814-9821.
dc.identifier.doi10.1007/s10854-019-01318-9
dc.identifier.endpage9821en_US
dc.identifier.issn0957-4522
dc.identifier.issue10en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage9814en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01318-9
dc.identifier.urihttps://hdl.handle.net/11491/1130
dc.identifier.volume30en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer New York LLC
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subject[Belirlenecek]en_US
dc.titleFrequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
dc.typeArticle

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