Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
[ X ]
Tarih
2021
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS diode characteristics are investigated by current-voltage (I - V) measurements with a wide range of temperature from 80 K to 300 K. At each temperature, rectifying behavior is achieved and it is improved with an increase in temperature. Barrier height and ideality factor are calculated according to the thermionic emission (TE) model from linearity in the forward bias region of the ln(I) versus V plot. The experimental zero-bias barrier height (Phi(b0)) values are in a good agreement with literature, and at around room temperature the ideality factor (n) reaches unity. At saturation regions in I - V curves, parasitic resistance values are derived by Ohm's law and the series resistance values are also reevaluated by Cheung's relation. Detailed I - V analysis is performed by modifying the TE model with an approximation of low barrier patches embedded in the main barrier height. Two linear relations in the characteristic plots of Phi(b0) and n indicate that double Gaussian distribution is a suitable current conduction model via localized barrier patches at low temperatures. Additionally, reverse bias current flow is analyzed under the dominant effect of Poole-Frenkel emission associated with the interfacial traps. According to the characteristic electric field-dependent current density plot, emission barrier height and relative dielectric constant for n-4H SiC are calculated.
Açıklama
Anahtar Kelimeler
Schottky Diode, Current Transport, Double Gaussian Distribution, Barrier Inhomogeneity
Kaynak
Journal Of Electronic Materials
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
Sayı
Künye
Gullu, H. H., Seme Sirin, D., & Yıldız, D. E. (2021). Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode. Journal of Electronic Materials, 50(12), 7044-7056.
