Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode

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dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorŞeme Şirin, Dilara
dc.contributor.authorYıldız, Dilber Esra
dc.date.accessioned2021-11-01T15:05:49Z
dc.date.available2021-11-01T15:05:49Z
dc.date.issued2021
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractA n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS diode characteristics are investigated by current-voltage (I - V) measurements with a wide range of temperature from 80 K to 300 K. At each temperature, rectifying behavior is achieved and it is improved with an increase in temperature. Barrier height and ideality factor are calculated according to the thermionic emission (TE) model from linearity in the forward bias region of the ln(I) versus V plot. The experimental zero-bias barrier height (Phi(b0)) values are in a good agreement with literature, and at around room temperature the ideality factor (n) reaches unity. At saturation regions in I - V curves, parasitic resistance values are derived by Ohm's law and the series resistance values are also reevaluated by Cheung's relation. Detailed I - V analysis is performed by modifying the TE model with an approximation of low barrier patches embedded in the main barrier height. Two linear relations in the characteristic plots of Phi(b0) and n indicate that double Gaussian distribution is a suitable current conduction model via localized barrier patches at low temperatures. Additionally, reverse bias current flow is analyzed under the dominant effect of Poole-Frenkel emission associated with the interfacial traps. According to the characteristic electric field-dependent current density plot, emission barrier height and relative dielectric constant for n-4H SiC are calculated.
dc.identifier.citationGullu, H. H., Seme Sirin, D., & Yıldız, D. E. (2021). Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode. Journal of Electronic Materials, 50(12), 7044-7056.
dc.identifier.doi10.1007/s11664-021-09254-3
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.scopus2-s2.0-85117166502
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s11664-021-09254-3
dc.identifier.urihttps://hdl.handle.net/11491/7412
dc.identifier.wosWOS:000708360700002
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Electronic Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectSchottky Diodeen_US
dc.subjectCurrent Transporten_US
dc.subjectDouble Gaussian Distributionen_US
dc.subjectBarrier Inhomogeneityen_US
dc.titleAnalysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
dc.typeArticle

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