Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system
[ X ]
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
World Scientific Publishing Co. Pte Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si ?111? and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage (I?V) characteristics of these structures were investigated in two different temperatures. The main electrical parameters such as the ideality factor (n), zero bias barrier height (?Bo(I?V)), and series resistance (Rs) values were found for 300 and 400K. The energy density distribution profiles of the interface state density (Nss) were determined from the I?V characteristics. In addition, the capacitance–voltage (C?V) and conductance–voltage (G/w?V) characteristics of devices were investigated in the frequency range 50–1000kHz at room temperature. Frequency-dependent electrical characteristics such as doping acceptor concentration (NA), energy difference between the valance band edge and bulk Fermi level (EF), diffusion potential (VD), barrier height (?B(C?V)), the image force barrier lowering (??B), maximum electric field (Em), and Rs values were determined using C?V and G/w?V plots. In addition, the Nss values were performed using Hill–Coleman method. According to experimental results, the locations of Nss and Rs have an important effect on I?V, C?V and G/w?V plots of MIS structure.
Açıklama
Anahtar Kelimeler
Al2O3, Atomic Layer Deposition, Interface State Density, Series Resistance
Kaynak
Surface Review and Letters
WoS Q Değeri
N/A
Scopus Q Değeri
Q3
Cilt
24
Sayı
6
Künye
Yıldız, D. E., Kanbur Cavuş, H. (2017). Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system. Surface Review and Letters, 24(6), 1750077.
