Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system

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dc.authorid0000-0003-2212-199X
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorKanbur Çavuş, Hatice
dc.date.accessioned2019-05-13T09:08:07Z
dc.date.available2019-05-13T09:08:07Z
dc.date.issued2017
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractAl2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si ?111? and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage (I?V) characteristics of these structures were investigated in two different temperatures. The main electrical parameters such as the ideality factor (n), zero bias barrier height (?Bo(I?V)), and series resistance (Rs) values were found for 300 and 400K. The energy density distribution profiles of the interface state density (Nss) were determined from the I?V characteristics. In addition, the capacitance–voltage (C?V) and conductance–voltage (G/w?V) characteristics of devices were investigated in the frequency range 50–1000kHz at room temperature. Frequency-dependent electrical characteristics such as doping acceptor concentration (NA), energy difference between the valance band edge and bulk Fermi level (EF), diffusion potential (VD), barrier height (?B(C?V)), the image force barrier lowering (??B), maximum electric field (Em), and Rs values were determined using C?V and G/w?V plots. In addition, the Nss values were performed using Hill–Coleman method. According to experimental results, the locations of Nss and Rs have an important effect on I?V, C?V and G/w?V plots of MIS structure.
dc.identifier.citationYıldız, D. E., Kanbur Cavuş, H. (2017). Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system. Surface Review and Letters, 24(6), 1750077.
dc.identifier.doi10.1142/S0218625X17500779
dc.identifier.issn0218-625X
dc.identifier.issue6en_US
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1142/S0218625X17500779
dc.identifier.urihttps://hdl.handle.net/11491/1939
dc.identifier.volume24en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWorld Scientific Publishing Co. Pte Ltd
dc.relation.ispartofSurface Review and Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAl2O3en_US
dc.subjectAtomic Layer Depositionen_US
dc.subjectInterface State Densityen_US
dc.subjectSeries Resistanceen_US
dc.titleElectrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system
dc.typeArticle

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