Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode
Yükleniyor...
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Gazi Univ
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of the electrical conductivity analysis indicated direct proportionality to the frequency change. Additionally, electric modulus was discussed to represent the dielectric relaxation process in the diode structure.
Açıklama
Anahtar Kelimeler
E-beam evaporation, Dielectric properties, Frequency effect
Kaynak
Journal Of Polytechnic-Politeknik Dergisi
WoS Q Değeri
N/A
Scopus Q Değeri
Cilt
22
Sayı
1
Künye
Güllü, H. H., & Yildiz, D. E. (2019). Frequency dependent dielectric properties of ZnSe/p-Si diode. Politeknik Dergisi, 22(1), 63-67.
