Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

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dc.authoridGüllü, Hasan Hüseyin / 0000-0001-8541-5309
dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authorwosidGüllü, Hasan Hüseyin / F-7486-2019
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorYıldız, Dilber Esra
dc.date.accessioned2021-11-01T15:02:02Z
dc.date.available2021-11-01T15:02:02Z
dc.date.issued2019
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThe study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of the electrical conductivity analysis indicated direct proportionality to the frequency change. Additionally, electric modulus was discussed to represent the dielectric relaxation process in the diode structure.
dc.identifier.citationGüllü, H. H., & Yildiz, D. E. (2019). Frequency dependent dielectric properties of ZnSe/p-Si diode. Politeknik Dergisi, 22(1), 63-67.
dc.identifier.doi10.2339/politeknik.389636
dc.identifier.endpage67en_US
dc.identifier.issn1302-0900
dc.identifier.issn2147-9429
dc.identifier.issue1en_US
dc.identifier.startpage63en_US
dc.identifier.urihttps://doi.org/10.2339/politeknik.389636
dc.identifier.urihttps://hdl.handle.net/11491/6818
dc.identifier.volume22en_US
dc.identifier.wosWOS:000456781300007
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakTR-Dizin
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherGazi Univ
dc.relation.ispartofJournal Of Polytechnic-Politeknik Dergisi
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectE-beam evaporationen_US
dc.subjectDielectric propertiesen_US
dc.subjectFrequency effecten_US
dc.titleFrequency Dependent Dielectric Properties of ZnSe/p-Si Diode
dc.typeArticle

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