Investigation on dielectric properties of atomic layer deposited Al 2O3 dielectric films
[ X ]
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Al/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room temperature between ?1?V and 3?V in the frequency range of 10 kHz and 1?MHz. In addition to the investigation of Al2O3 morphology using atomic force microscope, dielectric parameters; such as dielectric constant (??), dielectric loss (??), dielectric loss tangent (tan??), and real and imaginary parts of dielectric modulus (M? and M?, respectively), were calculated and effect of frequency on these parameters of Al/Al2O3/p-Si SBDs was discussed. Variations in these parameters at low frequencies were associated with the effect of interface states in low frequency region. Besides dielectric parameters, ac electrical conductivity of these SBDs was also investigated.
Açıklama
Anahtar Kelimeler
[Belirlenecek]
Kaynak
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
32
Sayı
3
Künye
Yıldız, D. E., Yıldırım, M., Gökçen, M. (2014). Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 32(3), 031509.
