Investigation on dielectric properties of atomic layer deposited Al 2O3 dielectric films

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dc.authorid0000-0003-2212-199X
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorYıldırım, Mert
dc.contributor.authorGökçen, Muharrem
dc.date.accessioned2019-05-13T08:57:41Z
dc.date.available2019-05-13T08:57:41Z
dc.date.issued2014
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractAl/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room temperature between ?1?V and 3?V in the frequency range of 10 kHz and 1?MHz. In addition to the investigation of Al2O3 morphology using atomic force microscope, dielectric parameters; such as dielectric constant (??), dielectric loss (??), dielectric loss tangent (tan??), and real and imaginary parts of dielectric modulus (M? and M?, respectively), were calculated and effect of frequency on these parameters of Al/Al2O3/p-Si SBDs was discussed. Variations in these parameters at low frequencies were associated with the effect of interface states in low frequency region. Besides dielectric parameters, ac electrical conductivity of these SBDs was also investigated.
dc.identifier.citationYıldız, D. E., Yıldırım, M., Gökçen, M. (2014). Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 32(3), 031509.
dc.identifier.doi10.1116/1.4870593
dc.identifier.issn0734-2101
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1116/1.4870593
dc.identifier.urihttps://hdl.handle.net/11491/986
dc.identifier.volume32en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subject[Belirlenecek]en_US
dc.titleInvestigation on dielectric properties of atomic layer deposited Al 2O3 dielectric films
dc.typeArticle

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